[GH-ISSUE #13] Plugin never triggers #1

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opened 2026-10-15 18:07:21 +00:00 by bsakaguchi · 0 comments

bsakaguchi commented

2026-10-15 18:07:21 +00:00

Owner

Originally created by @lukasstraub2 on GitHub (Jun 29, 2026).
Original GitHub issue: https://github.com/SillyTavern/SillyTavern-Office-Parser/issues/13

Hello,
I tried attaching pdf and ods as a file to the chat, but they aren't parsed with this plugin.

$ ./start.sh 
Installing Node Modules...

up to date in 528ms
Entering SillyTavern...
Node version: v20.19.2. Running in production environment. Server directory: /home/lukas/SillyTavern
Using config path: ./config.yaml
Using data root: ./data
Preferring IPv4 for DNS resolution

SillyTavern 1.18.0
Running 'HEAD' (51ad27fb8) - 5/3/2026, 3:45:46 PM UTC

Auto-updating server plugins... Set enableServerPluginsAutoUpdate: false in config.yaml to disable this feature.
All plugins are up to date.
Initializing plugin from /home/lukas/SillyTavern/plugins/SillyTavern-Office-Parser/dist/plugin.js
[SillyTavern-Office-Parser] Plugin loaded!
1 server plugin(s) are currently loaded. Make sure you know exactly what they do, and only install plugins from trusted sources!

Warning: listen is enabled but private request filter is disabled. This may expose your server to SSRF attacks.
To enable, provide trusted addresses in privateAddressWhitelist.allowedRanges and set privateAddressWhitelist.enabled to true in config.yaml and restart the server.

Compiling frontend libraries...
webpack 5.105.4 compiled successfully in 627 ms

Launching in a browser: default...
SillyTavern is listening on IPv4: 0.0.0.0:8000

To limit connections to internal localhost only ([::1] or 127.0.0.1), change the setting in config.yaml to "listen: false".
Check the "access.log" file in the data directory to inspect incoming connections: data/access.log

=================================================

Go to: http://127.0.0.1:8000/ to open SillyTavern

=================================================

New connection from 100.115.92.26; User Agent: Mozilla/5.0 (X11; CrOS x86_64 14541.0.0) AppleWebKit/537.36 (KHTML, like Gecko) Chrome/150.0.0.0 Safari/537.36

Extensions available for default-user [
  { type: 'system', name: 'assets' },
  { type: 'system', name: 'attachments' },
  { type: 'system', name: 'caption' },
  { type: 'system', name: 'connection-manager' },
  { type: 'system', name: 'expressions' },
  { type: 'system', name: 'gallery' },
  { type: 'system', name: 'memory' },
  { type: 'system', name: 'quick-reply' },
  { type: 'system', name: 'regex' },
  { type: 'system', name: 'stable-diffusion' },
  { type: 'system', name: 'token-counter' },
  { type: 'system', name: 'translate' },
  { type: 'system', name: 'tts' },
  { type: 'system', name: 'vectors' },
  { type: 'local', name: 'third-party/Extension-LaTeX' }
]
Available OpenRouter models: [

[...]

]
Instantiated the tokenizer for deepseek
Uploaded file: /user/files/1782755962216_7189133584509114.txt from default-user
Chat Completion request: {
  messages: [
    { role: 'system', content: '[Start a new Chat]' },
    {
      role: 'user',
      content: '02/29/08 Benefits \x01 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness \x01 Fully Characterized Capacitance and Avalanche SOA \x01 Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 Applications \x012 High Efficiency Synchronous Rectification in SMPS \x012 Uninterruptible Power Supply \x012 High Speed Power Switching \x012 Hard Switched and High Frequency Circuits HEXFET \x01 2 Power MOSFET S D G \x80h2E2WUQIH G D S Gate Drain Source TO-220AB IRFB3806PbF D S D G D D S G D 2 Pak IRFS3806PbF TO-262 IRFSL3806PbF S D G IRFB3806PbF IRFS3806PbF IRFSL3806PbF V DSS 60V R DS(on) typ. 12.6m Ω max. 15.8m Ω I D 43A Absolute Maximum Ratings Symbol Parameter Units I D @ T C = 25°C Continuous Drain Current, VGS @ 10V I D @ T C = 100°C Continuous Drain Current, V GS @ 10V A I DM Pulsed Drain Current \x99 P D @T C = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C V GS Gate-to-Source Voltage V dv/dt Peak Diode Recovery \x02 V/ns T J Operating Junction and °C T STG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy \x03 mJ I AR Avalanche Current \x99 A E AR Repetitive Avalanche Energy \x04 mJ Thermal Resistance Symbol Parameter Typ. Max. Units R θ JC Junction-to-Case \x05 ––– 2.12 R θ CS Case-to-Sink, Flat Greased Surface, TO-220 0.50 ––– °C/W R θ JA Junction-to-Ambient, TO-220 \x06\x05 ––– 62 R θ JA Junction-to-Ambient (PCB Mount) , D 2 Pak \x06\x05 ––– 40 300 Max. 43 31 170 73 25 7.1 71 24 -55 to + 175 ± 20 0.47 10lb \x07 in (1.1N \x07 m)\n' +
        's\x82pfG\x83G\x83vQVHT\x80\x98p 2 www.irf.com x\x02\x03\x04\x05X \x01 2 Repetitive rating; pulse width limited by max. junction temperature. \x02 2 Limited by T Jmax , starting T J = 25°C, L = 0.23mH R G = 25 Ω , I AS = 25A, V GS =10V. Part not recommended for use above this value. \x03 I SD ≤ 25A, di/dt ≤ 1580A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C. \x04 2 Pulse width ≤ 400μs; duty cycle ≤ 2%. S D G \x05 2 C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. \x06 C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. \x07 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. \b 2 R θ is measured at T J approximately 90°C. Static @ T J = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ∆ V (BR)DSS / ∆ T J Breakdown Voltage Temp. Coefficient ––– 0.075 ––– V/°C R DS(on) Static Drain-to-Source On-Resistance ––– 12.6 15.8 m Ω V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V I DSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 I GSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ T J = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 41 ––– ––– S Q g Total Gate Charge ––– 22 30 nC Q gs Gate-to-Source Charge ––– 5.0 ––– Q gd Gate-to-Drain ("Miller") Charge ––– 6.3 ––– Q sync Total Gate Charge Sync. (Q g - Q gd ) ––– 28.3 ––– R G(int) Internal Gate Resistance ––– 0.79 ––– Ω t d(on) Turn-On Delay Time ––– 6.3 ––– ns t r Rise Time ––– 40 ––– t d(off) Turn-Off Delay Time ––– 49 ––– t f Fall Time ––– 47 ––– C iss Input Capacitance ––– 1150 ––– C oss Output Capacitance ––– 130 ––– C rss Reverse Transfer Capacitance ––– 67 ––– pF C oss eff. (ER) Effective Output Capacitance (Energy Related) \x01 ––– 190 ––– C oss eff. (TR) Effective Output Capacitance (Time Related) \x03 ––– 230 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current ––– ––– 43 A (Body Diode) I SM Pulsed Source Current ––– ––– 170 (Body Diode) \x02\x99 V SD Diode Forward Voltage ––– ––– 1.3 V t rr Reverse Recovery Time ––– 22 33 ns T J = 25°C V R = 51V, ––– 26 39 T J = 125°C I F = 25A Q rr Reverse Recovery Charge ––– 17 26 nC T J = 25°C di/dt = 100A/μs \x05 ––– 24 36 T J = 125°C I RRM Reverse Recovery Current ––– 1.4 ––– A T J = 25°C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions V DS = 10V, I D = 25A I D = 25A V GS = 20V V GS = -20V MOSFET symbol showing the V DS = 30V Conditions V GS = 10V \x05 V GS = 0V V DS = 50V ƒ = 1.0MHz V GS = 0V, V DS = 0V to 60V \x01 V GS = 0V, V DS = 0V to 60V \x03 T J = 25°C, I S = 25A, V GS = 0V \x05 integral reverse p-n junction diode. Conditions V GS = 0V, I D = 250μA Reference to 25°C, I D = 5mA \x99 V GS = 10V, I D = 25A \x05 V DS = V GS , I D = 50μA V DS = 60V, V GS = 0V V DS = 48V, V GS = 0V, T J = 125°C I D = 25A R G = 20 Ω V GS = 10V \x05 V DD = 39V I D = 25A, V DS =0V, V GS = 10V\n' +
        's\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 3 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output Characteristics Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 1 10 100 1000 I D , Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V ≤ 60μs PULSE WIDTH Tj = 25°C 4.5V 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 1 10 100 1000 I D , Drain-to-Source Current (A) 4.5V ≤ 60μs PULSE WIDTH Tj = 175°C VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 2 3 4 5 6 7 8 9 V GS , Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , Drain-to-Source Current (A) T J = 25°C T J = 175°C V DS = 25V ≤ 60μs PULSE WIDTH 1 10 100 V DS , Drain-to-Source Voltage (V) 10 100 1000 10000 C, Capacitance (pF) V GS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED C rss = C gd C oss = C ds + C gd C oss C rss C iss 0 5 10 15 20 25 Q G , Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 V GS , Gate-to-Source Voltage (V) V DS = 48V V DS = 30V V DS = 12V I D = 25A -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 25A V GS = 10V\n' +
        's\x82pfG\x83G\x83vQVHT\x80\x98p 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 10. Drain-to-Source Breakdown Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 11. Typical C OSS Stored Energy Fig 9. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Avalanche Energy vs. DrainCurrent 0.0 0.5 1.0 1.5 2.0 V SD , Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I SD , Reverse Drain Current (A) T J = 25°C T J = 175°C V GS = 0V -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) 60 65 70 75 80 V (BR)DSS , Drain-to-Source Breakdown Voltage (V) Id = 5mA -10 0 10 20 30 40 50 60 70 V DS, Drain-to-Source Voltage (V) 0.0 0.1 0.1 0.2 0.2 0.3 0.3 0.4 Energy (μJ) 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) 0 50 100 150 200 250 300 E AS , Single Pulse Avalanche Energy (mJ) I D TOP 2.8A 5.1A BOTTOM 25A 1 10 100 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) Tc = 25°C Tj = 175°C Single Pulse 100μsec 1msec 10msec DC 25 50 75 100 125 150 175 T C , Case Temperature (°C) 0 5 10 15 20 25 30 35 40 45 I D , Drain Current (A)\n' +
        's\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 5 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 14. Typical Avalanche Current vs.Pulsewidth Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax . This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆ T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = t av ·f Z thJC (D, t av ) = Transient thermal resistance, see Figures 13) P D (ave) = 1/2 ( 1.3·BV·I av ) = 2 h T/ Z thJC I av = 2 h T/ [1.3·BV·Z th ] E AS (AR) = P D (ave) ·t av 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 Thermal Response ( Z thJC ) °C/W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τ i (sec) 0.6086 0.00026 0.9926 0.001228 0.5203 0.00812 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 R 1 R 1 R 2 R 2 R 3 R 3 τ τ C Ci τ i / Ri Ci= τ i / Ri 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) 0.1 1 10 100 Avalanche Current (A) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) 0 20 40 60 80 E AR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 25A\n' +
        's\x82pfG\x83G\x83vQVHT\x80\x98p 6 www.irf.com p\x02\x03F2IU 2E2\x84 \x99\x97\x102\x82\x12\x99\x13\x14\x12\x15 2g\x17\x15\x15\x12\x18\x192\x14\x1AF2\x1C \x01 G\x1C\x19 Fig 16. Threshold Voltage vs. Temperature p\x02\x03F2IW 2E2\x84 \x99\x97\x102\x83\x19\x13\x15\x12\x1C2g\x1F\x97\x15 \x122\x14\x1AF2\x1C \x01 G\x1C\x19 p\x02\x03F2IV 2E2\x84 \x99\x97\x102\x82\x12\x99\x13\x14\x12\x15 2g\x17\x15\x15\x12\x18\x192\x14\x1AF2\x1C \x01 G\x1C\x19 p\x02\x03F2PH 2E2\x84 \x99\x97\x102\x83\x19\x13\x15\x12\x1C2g\x1F\x97\x15 \x122\x14\x1AF2\x1C \x01 G\x1C\x19 0 200 400 600 800 1000 di F /dt (A/μs) 0 2 4 6 8 10 12 14 I RR (A) I F = 17A V R = 51V T J = 25°C T J = 125°C 0 200 400 600 800 1000 di F /dt (A/μs) 0 2 4 6 8 10 12 14 I RR (A) I F = 25A V R = 51V T J = 25°C T J = 125°C 0 200 400 600 800 1000 di F /dt (A/μs) 10 60 110 160 210 260 Q RR (A) I F = 17A V R = 51V T J = 25°C T J = 125°C 0 200 400 600 800 1000 di F /dt (A/μs) 10 60 110 160 210 260 Q RR (A) I F = 25A V R = 51V T J = 25°C T J = 125°C -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V GS(th) , Gate threshold Voltage (V) I D = 50μA I D = 250μA I D = 1.0mA I D = 1.0A\n' +
        's\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 7 Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms V GS V DS 90% 10% t d(on) t d(off) t r t f V GS Pulse Width < 1μs Duty Factor < 0.1% V DD V DS L D D.U.T + - Fig 21b. Unclamped Inductive Waveforms Fig 21a. Unclamped Inductive Test Circuit tp V (BR)DSS I AS R G I AS 0.01 Ω t p D.U.T L V DS + - V DD DRIVER A 15V 20V V GS Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 20. \x80\x12\x97!2h \x13\x1C\x122\x82\x12\x99\x13\x14\x12\x15 2\x1C\x14G\x1C\x192\x84\x12\x1A\x192g \x15\x99\x17 \x192 for N-Channel HEXFET \x02 2 Power MOSFETs 1K VCC DUT 0 L g\x02\x03\x99\x05\x02\x062v\x97 \x05\x062g \x02\x0E\x0F\x03\x97\x06\x02 • 2v \x102\x83\x06\x03\x97 2s \x0E\x05\x99\x06\x97 \x99\x0F 22 • q\x03 \x05 \x0E2\x80\x15\x97 \x0F 22 • v \x102v\x0F\x97\x16\x97\x17\x0F2s \x0E\x05\x99\x06\x97 \x99\x0F 222222g\x05\x03\x03\x0F \x062\x84\x03\x97 \x19 \x03\x1A\x0F\x03 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current V GS =10V V DD I SD Driver Gate Drive D.U.T. I SD Waveform D.U.T. V DS Waveform Inductor Curent D = P.W. Period B 2\x86 q\x83 2a2S\x862\x05\x06\x072v\x06 \x992v \x0E2h \x99 \x10 B + - + + + - - - \x03 \x04 \x02 \x82 q \x86 hh • \x0E\x1CG\x0E\x062\x99 \x06\x03 \x15\x15\x0F\x0E2\x98 2\x82 q • h\x03\x02\x1C\x0F\x032 \x97\x1A\x0F2\x06 \x0F2\x97 2hF\x85F\x84F • s \x83h 2\x99 \x06\x03 \x15\x15\x0F\x0E2\x98 2h\x05\x06 2p\x97\x99\x06 \x0324h4 • hF\x85F\x84F2E2h\x0F\x1C\x02\x99\x0F2\x85 \x0E\x0F\x032\x84\x0F \x06 hF\x85F\x84 \x01 s \x0E\x05\x99\x06 \x032g\x05\x03\x03\x0F \x06\n' +
        `s\x82pfG\x83G\x83vQVHT\x80\x98p 8 www.irf.com x\x02\x03\x04X2p\x02\b2\x03 \x042 \x02 \x032\x99 \b\b\x04\x0E\x032\x0F\b\x97\x11\x12\x0E\x132\x14\x15\x04\x97 \x042\b\x04\x16\x04\b2\x03\x022s\x822\x11\x04\x98 \x12\x03\x042\x97\x032 \x03\x03\x14XGG\x11\x11\x11F\x12\b\x16F\x99\x02 G\x14\x97\x99\x1C\x97\x13\x04G TO-220AB packages are not recommended for Surface Mount Application. \x84yEPPHef2\x80\x97\x99 \x97 \x0E2y\x0F\x10\x11\x12\x13\x0E2 2 @h\x04\x05\x06\x07\b\x04 \x07\b2\x97 \x062\b \x072\x04\x072\x05\x04\x0E\x0E\x04\x05\x06\x0F\x06 \b2@\x04\x07\x99 \x06\bAA \x84yEPPHef2\x80\x97\x14\x102w\x97\x14 \x12\x13 2s\x13\x17\x18\x14\x19\x97\x10\x12\x18\x13 (;$03/(\x1D ,1 7+( $66(0%/< /,1( \x1B&\x1B 7+,6 ,6 $1 ,5)\x14\x13\x14\x13 /27 &2'( \x14\x1A\x1B\x1C $66(0%/(' 21 :: \x14\x1C\x0F \x14\x1C\x1C\x1A 3$57 180%(5 $66(0%/< /27 &2'( '$7( &2'( <($5 \x1A \x14\x1C\x1C\x1A /,1( & :((. \x14\x1C /2*2 5(&7,),(5 ,17(51$7,21$/ Note: "P" in assembly line position indicates "Lead-Free"\n` +
        "s\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 9 h P \x80\x97 2@\x84yEPTQefA2\x80\x97\x14\x102w\x97\x14 \x12\x13 2s\x13\x17\x18\x14\x19\x97\x10\x12\x18\x13 h P \x80\x97 2@\x84yEPTQefA2\x80\x97\x99 \x97 \x0E2y\x0F\x10\x11\x12\x13\x0E h\x04\x05\x06\x07\b\x04 \x07\b2\x97 \x062\b \x072\x04\x072\x05\x04\x0E\x0E\x04\x05\x06\x0F\x06 \b2@\x04\x07\x99 \x06\bA '$7(\x04&2'( <($5\x04\x13\x04 \x04\x15\x13\x13\x13 :((.\x04\x13\x15 $\x04 \x04$66(0%/<\x046,7(\x04&2'( 5(&7,),(5 ,17(51$7,21$/ 3$57\x04180%(5 3\x04 \x04'(6,*1$7(6\x04/($'\x04\x10\x04)5(( 352'8&7\x04 237,21$/ )\x18\x16\x136 ,1\x047+(\x04$66(0%/<\x04/,1(\x04\x1E/\x1E $66(0%/('\x0421\x04::\x04\x13\x15\x0F\x04\x15\x13\x13\x13 7+,6\x04,6\x04$1\x04,5)\x18\x16\x136\x04:,7+ /27\x04&2'(\x04\x1B\x13\x15\x17 ,17(51$7,21$/ /2*2 5(&7,),(5 /27\x04&2'( $66(0%/< <($5\x04\x13\x04 \x04\x15\x13\x13\x13 3$57\x04180%(5 '$7(\x04&2'( /,1(\x04/ :((.\x04\x13\x15 PS )\x18\x16\x136 /2*2 $66(0%/< /27\x04&2'( x\x02\x03\x04X2p\x02\b2\x03 \x042 \x02 \x032\x99 \b\b\x04\x0E\x032\x0F\b\x97\x11\x12\x0E\x132\x14\x15\x04\x97 \x042\b\x04\x16\x04\b2\x03\x022s\x822\x11\x04\x98 \x12\x03\x042\x97\x032 \x03\x03\x14XGG\x11\x11\x11F\x12\b\x16F\x99\x02 G\x14\x97\x99\x1C\x97\x13\x04G\n" +
        "s\x82pfG\x83G\x83vQVHT\x80\x98p 10 www.irf.com TO-262 Part Marking Information TO-262 Package Outline Dimensions are shown in millimeters (inches) /2*2 5(&7,),(5 ,17(51$7,21$/ /27 &2'( $66(0%/< /2*2 5(&7,),(5 ,17(51$7,21$/ '$7( &2'( :((. \x14\x1C <($5 \x1A \x14\x1C\x1C\x1A 3$57 180%(5 $ $66(0%/< 6,7( &2'( PS 352'8&7 237,21$/ 3 '(6,*1$7(6 /($'\x10)5(( (;$03/(\x1D 7+,6 ,6 $1 ,5/\x16\x14\x13\x16/ /27 &2'( \x14\x1A\x1B\x1C $66(0%/< 3$57 180%(5 '$7( &2'( :((. \x14\x1C /,1( & /27 &2'( <($5 \x1A \x14\x1C\x1C\x1A $66(0%/(' 21 :: \x14\x1C\x0F \x14\x1C\x1C\x1A ,1 7+( $66(0%/< /,1( #&# x\x02\x03\x04X2p\x02\b2\x03 \x042 \x02 \x032\x99 \b\b\x04\x0E\x032\x0F\b\x97\x11\x12\x0E\x132\x14\x15\x04\x97 \x042\b\x04\x16\x04\b2\x03\x022s\x822\x11\x04\x98 \x12\x03\x042\x97\x032 \x03\x03\x14XGG\x11\x11\x11F\x12\b\x16F\x99\x02 G\x14\x97\x99\x1C\x97\x13\x04G\n" +
        's\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 11 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 02/08 h P \x80\x97 2@\x84yEPTQefA2\x84\x97\x1F\x0E282\x82\x0E\x0E\x112s\x13\x17\x18\x14\x19\x97\x10\x12\x18\x13 Dimensions are shown in millimeters (inches) 3 4 4 TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. x\x02\x03\x04X2p\x02\b2\x03 \x042 \x02 \x032\x99 \b\b\x04\x0E\x032\x0F\b\x97\x11\x12\x0E\x132\x14\x15\x04\x97 \x042\b\x04\x16\x04\b2\x03\x022s\x822\x11\x04\x98 \x12\x03\x042\x97\x032 \x03\x03\x14XGG\x11\x11\x11F\x12\b\x16F\x99\x02 G\x14\x97\x99\x1C\x97\x13\x04G\n' +
        '\n' +
        'Quick test, what can you read from the provided document? Do you see images as well?'
    }
  ],
  prompt: undefined,
  model: 'deepseek/deepseek-v4-flash',
  temperature: 1,
  max_tokens: 128000,
  max_completion_tokens: undefined,
  stream: true,
  presence_penalty: 0,
  frequency_penalty: 0,
  top_p: 1,
  top_k: 500,
  stop: undefined,
  logit_bias: undefined,
  seed: undefined,
  n: undefined,
  transforms: [],
  plugins: [],
  reasoning: { exclude: false },
  min_p: 0,
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  repetition_penalty: 1,
  provider: {
    allow_fallbacks: false,
    order: [ 'Alibaba', 'Baidu', 'DeepSeek', 'SiliconFlow', 'StreamLake' ]
  }
}
Streaming request in progress
Streaming request finished
^C[SillyTavern-Office-Parser] Plugin exited

Originally created by @lukasstraub2 on GitHub (Jun 29, 2026). Original GitHub issue: https://github.com/SillyTavern/SillyTavern-Office-Parser/issues/13 Hello, I tried attaching pdf and ods as a file to the chat, but they aren't parsed with this plugin. ``` $ ./start.sh Installing Node Modules... up to date in 528ms Entering SillyTavern... Node version: v20.19.2. Running in production environment. Server directory: /home/lukas/SillyTavern Using config path: ./config.yaml Using data root: ./data Preferring IPv4 for DNS resolution SillyTavern 1.18.0 Running 'HEAD' (51ad27fb8) - 5/3/2026, 3:45:46 PM UTC Auto-updating server plugins... Set enableServerPluginsAutoUpdate: false in config.yaml to disable this feature. All plugins are up to date. Initializing plugin from /home/lukas/SillyTavern/plugins/SillyTavern-Office-Parser/dist/plugin.js [SillyTavern-Office-Parser] Plugin loaded! 1 server plugin(s) are currently loaded. Make sure you know exactly what they do, and only install plugins from trusted sources! Warning: listen is enabled but private request filter is disabled. This may expose your server to SSRF attacks. To enable, provide trusted addresses in privateAddressWhitelist.allowedRanges and set privateAddressWhitelist.enabled to true in config.yaml and restart the server. Compiling frontend libraries... webpack 5.105.4 compiled successfully in 627 ms Launching in a browser: default... SillyTavern is listening on IPv4: 0.0.0.0:8000 To limit connections to internal localhost only ([::1] or 127.0.0.1), change the setting in config.yaml to "listen: false". Check the "access.log" file in the data directory to inspect incoming connections: data/access.log ================================================= Go to: http://127.0.0.1:8000/ to open SillyTavern ================================================= New connection from 100.115.92.26; User Agent: Mozilla/5.0 (X11; CrOS x86_64 14541.0.0) AppleWebKit/537.36 (KHTML, like Gecko) Chrome/150.0.0.0 Safari/537.36 Extensions available for default-user [ { type: 'system', name: 'assets' }, { type: 'system', name: 'attachments' }, { type: 'system', name: 'caption' }, { type: 'system', name: 'connection-manager' }, { type: 'system', name: 'expressions' }, { type: 'system', name: 'gallery' }, { type: 'system', name: 'memory' }, { type: 'system', name: 'quick-reply' }, { type: 'system', name: 'regex' }, { type: 'system', name: 'stable-diffusion' }, { type: 'system', name: 'token-counter' }, { type: 'system', name: 'translate' }, { type: 'system', name: 'tts' }, { type: 'system', name: 'vectors' }, { type: 'local', name: 'third-party/Extension-LaTeX' } ] Available OpenRouter models: [ [...] ] Instantiated the tokenizer for deepseek Uploaded file: /user/files/1782755962216_7189133584509114.txt from default-user Chat Completion request: { messages: [ { role: 'system', content: '[Start a new Chat]' }, { role: 'user', content: '02/29/08 Benefits \x01 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness \x01 Fully Characterized Capacitance and Avalanche SOA \x01 Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 Applications \x012 High Efficiency Synchronous Rectification in SMPS \x012 Uninterruptible Power Supply \x012 High Speed Power Switching \x012 Hard Switched and High Frequency Circuits HEXFET \x01 2 Power MOSFET S D G \x80h2E2WUQIH G D S Gate Drain Source TO-220AB IRFB3806PbF D S D G D D S G D 2 Pak IRFS3806PbF TO-262 IRFSL3806PbF S D G IRFB3806PbF IRFS3806PbF IRFSL3806PbF V DSS 60V R DS(on) typ. 12.6m Ω max. 15.8m Ω I D 43A Absolute Maximum Ratings Symbol Parameter Units I D @ T C = 25°C Continuous Drain Current, VGS @ 10V I D @ T C = 100°C Continuous Drain Current, V GS @ 10V A I DM Pulsed Drain Current \x99 P D @T C = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C V GS Gate-to-Source Voltage V dv/dt Peak Diode Recovery \x02 V/ns T J Operating Junction and °C T STG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy \x03 mJ I AR Avalanche Current \x99 A E AR Repetitive Avalanche Energy \x04 mJ Thermal Resistance Symbol Parameter Typ. Max. Units R θ JC Junction-to-Case \x05 ––– 2.12 R θ CS Case-to-Sink, Flat Greased Surface, TO-220 0.50 ––– °C/W R θ JA Junction-to-Ambient, TO-220 \x06\x05 ––– 62 R θ JA Junction-to-Ambient (PCB Mount) , D 2 Pak \x06\x05 ––– 40 300 Max. 43 31 170 73 25 7.1 71 24 -55 to + 175 ± 20 0.47 10lb \x07 in (1.1N \x07 m)\n' + 's\x82pfG\x83G\x83vQVHT\x80\x98p 2 www.irf.com x\x02\x03\x04\x05X \x01 2 Repetitive rating; pulse width limited by max. junction temperature. \x02 2 Limited by T Jmax , starting T J = 25°C, L = 0.23mH R G = 25 Ω , I AS = 25A, V GS =10V. Part not recommended for use above this value. \x03 I SD ≤ 25A, di/dt ≤ 1580A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C. \x04 2 Pulse width ≤ 400μs; duty cycle ≤ 2%. S D G \x05 2 C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. \x06 C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. \x07 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. \b 2 R θ is measured at T J approximately 90°C. Static @ T J = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ∆ V (BR)DSS / ∆ T J Breakdown Voltage Temp. Coefficient ––– 0.075 ––– V/°C R DS(on) Static Drain-to-Source On-Resistance ––– 12.6 15.8 m Ω V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V I DSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 I GSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ T J = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 41 ––– ––– S Q g Total Gate Charge ––– 22 30 nC Q gs Gate-to-Source Charge ––– 5.0 ––– Q gd Gate-to-Drain ("Miller") Charge ––– 6.3 ––– Q sync Total Gate Charge Sync. (Q g - Q gd ) ––– 28.3 ––– R G(int) Internal Gate Resistance ––– 0.79 ––– Ω t d(on) Turn-On Delay Time ––– 6.3 ––– ns t r Rise Time ––– 40 ––– t d(off) Turn-Off Delay Time ––– 49 ––– t f Fall Time ––– 47 ––– C iss Input Capacitance ––– 1150 ––– C oss Output Capacitance ––– 130 ––– C rss Reverse Transfer Capacitance ––– 67 ––– pF C oss eff. (ER) Effective Output Capacitance (Energy Related) \x01 ––– 190 ––– C oss eff. (TR) Effective Output Capacitance (Time Related) \x03 ––– 230 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current ––– ––– 43 A (Body Diode) I SM Pulsed Source Current ––– ––– 170 (Body Diode) \x02\x99 V SD Diode Forward Voltage ––– ––– 1.3 V t rr Reverse Recovery Time ––– 22 33 ns T J = 25°C V R = 51V, ––– 26 39 T J = 125°C I F = 25A Q rr Reverse Recovery Charge ––– 17 26 nC T J = 25°C di/dt = 100A/μs \x05 ––– 24 36 T J = 125°C I RRM Reverse Recovery Current ––– 1.4 ––– A T J = 25°C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions V DS = 10V, I D = 25A I D = 25A V GS = 20V V GS = -20V MOSFET symbol showing the V DS = 30V Conditions V GS = 10V \x05 V GS = 0V V DS = 50V ƒ = 1.0MHz V GS = 0V, V DS = 0V to 60V \x01 V GS = 0V, V DS = 0V to 60V \x03 T J = 25°C, I S = 25A, V GS = 0V \x05 integral reverse p-n junction diode. Conditions V GS = 0V, I D = 250μA Reference to 25°C, I D = 5mA \x99 V GS = 10V, I D = 25A \x05 V DS = V GS , I D = 50μA V DS = 60V, V GS = 0V V DS = 48V, V GS = 0V, T J = 125°C I D = 25A R G = 20 Ω V GS = 10V \x05 V DD = 39V I D = 25A, V DS =0V, V GS = 10V\n' + 's\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 3 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output Characteristics Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 1 10 100 1000 I D , Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V ≤ 60μs PULSE WIDTH Tj = 25°C 4.5V 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 1 10 100 1000 I D , Drain-to-Source Current (A) 4.5V ≤ 60μs PULSE WIDTH Tj = 175°C VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 2 3 4 5 6 7 8 9 V GS , Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , Drain-to-Source Current (A) T J = 25°C T J = 175°C V DS = 25V ≤ 60μs PULSE WIDTH 1 10 100 V DS , Drain-to-Source Voltage (V) 10 100 1000 10000 C, Capacitance (pF) V GS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED C rss = C gd C oss = C ds + C gd C oss C rss C iss 0 5 10 15 20 25 Q G , Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 V GS , Gate-to-Source Voltage (V) V DS = 48V V DS = 30V V DS = 12V I D = 25A -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 25A V GS = 10V\n' + 's\x82pfG\x83G\x83vQVHT\x80\x98p 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 10. Drain-to-Source Breakdown Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 11. Typical C OSS Stored Energy Fig 9. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Avalanche Energy vs. DrainCurrent 0.0 0.5 1.0 1.5 2.0 V SD , Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I SD , Reverse Drain Current (A) T J = 25°C T J = 175°C V GS = 0V -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) 60 65 70 75 80 V (BR)DSS , Drain-to-Source Breakdown Voltage (V) Id = 5mA -10 0 10 20 30 40 50 60 70 V DS, Drain-to-Source Voltage (V) 0.0 0.1 0.1 0.2 0.2 0.3 0.3 0.4 Energy (μJ) 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) 0 50 100 150 200 250 300 E AS , Single Pulse Avalanche Energy (mJ) I D TOP 2.8A 5.1A BOTTOM 25A 1 10 100 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) Tc = 25°C Tj = 175°C Single Pulse 100μsec 1msec 10msec DC 25 50 75 100 125 150 175 T C , Case Temperature (°C) 0 5 10 15 20 25 30 35 40 45 I D , Drain Current (A)\n' + 's\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 5 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 14. Typical Avalanche Current vs.Pulsewidth Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax . This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆ T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = t av ·f Z thJC (D, t av ) = Transient thermal resistance, see Figures 13) P D (ave) = 1/2 ( 1.3·BV·I av ) = 2 h T/ Z thJC I av = 2 h T/ [1.3·BV·Z th ] E AS (AR) = P D (ave) ·t av 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 Thermal Response ( Z thJC ) °C/W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τ i (sec) 0.6086 0.00026 0.9926 0.001228 0.5203 0.00812 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 R 1 R 1 R 2 R 2 R 3 R 3 τ τ C Ci τ i / Ri Ci= τ i / Ri 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) 0.1 1 10 100 Avalanche Current (A) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) 0 20 40 60 80 E AR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 25A\n' + 's\x82pfG\x83G\x83vQVHT\x80\x98p 6 www.irf.com p\x02\x03F2IU 2E2\x84 \x99\x97\x102\x82\x12\x99\x13\x14\x12\x15 2g\x17\x15\x15\x12\x18\x192\x14\x1AF2\x1C \x01 G\x1C\x19 Fig 16. Threshold Voltage vs. Temperature p\x02\x03F2IW 2E2\x84 \x99\x97\x102\x83\x19\x13\x15\x12\x1C2g\x1F\x97\x15 \x122\x14\x1AF2\x1C \x01 G\x1C\x19 p\x02\x03F2IV 2E2\x84 \x99\x97\x102\x82\x12\x99\x13\x14\x12\x15 2g\x17\x15\x15\x12\x18\x192\x14\x1AF2\x1C \x01 G\x1C\x19 p\x02\x03F2PH 2E2\x84 \x99\x97\x102\x83\x19\x13\x15\x12\x1C2g\x1F\x97\x15 \x122\x14\x1AF2\x1C \x01 G\x1C\x19 0 200 400 600 800 1000 di F /dt (A/μs) 0 2 4 6 8 10 12 14 I RR (A) I F = 17A V R = 51V T J = 25°C T J = 125°C 0 200 400 600 800 1000 di F /dt (A/μs) 0 2 4 6 8 10 12 14 I RR (A) I F = 25A V R = 51V T J = 25°C T J = 125°C 0 200 400 600 800 1000 di F /dt (A/μs) 10 60 110 160 210 260 Q RR (A) I F = 17A V R = 51V T J = 25°C T J = 125°C 0 200 400 600 800 1000 di F /dt (A/μs) 10 60 110 160 210 260 Q RR (A) I F = 25A V R = 51V T J = 25°C T J = 125°C -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V GS(th) , Gate threshold Voltage (V) I D = 50μA I D = 250μA I D = 1.0mA I D = 1.0A\n' + 's\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 7 Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms V GS V DS 90% 10% t d(on) t d(off) t r t f V GS Pulse Width < 1μs Duty Factor < 0.1% V DD V DS L D D.U.T + - Fig 21b. Unclamped Inductive Waveforms Fig 21a. Unclamped Inductive Test Circuit tp V (BR)DSS I AS R G I AS 0.01 Ω t p D.U.T L V DS + - V DD DRIVER A 15V 20V V GS Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 20. \x80\x12\x97!2h \x13\x1C\x122\x82\x12\x99\x13\x14\x12\x15 2\x1C\x14G\x1C\x192\x84\x12\x1A\x192g \x15\x99\x17 \x192 for N-Channel HEXFET \x02 2 Power MOSFETs 1K VCC DUT 0 L g\x02\x03\x99\x05\x02\x062v\x97 \x05\x062g \x02\x0E\x0F\x03\x97\x06\x02 • 2v \x102\x83\x06\x03\x97 2s \x0E\x05\x99\x06\x97 \x99\x0F 22 • q\x03 \x05 \x0E2\x80\x15\x97 \x0F 22 • v \x102v\x0F\x97\x16\x97\x17\x0F2s \x0E\x05\x99\x06\x97 \x99\x0F 222222g\x05\x03\x03\x0F \x062\x84\x03\x97 \x19 \x03\x1A\x0F\x03 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current V GS =10V V DD I SD Driver Gate Drive D.U.T. I SD Waveform D.U.T. V DS Waveform Inductor Curent D = P.W. Period B 2\x86 q\x83 2a2S\x862\x05\x06\x072v\x06 \x992v \x0E2h \x99 \x10 B + - + + + - - - \x03 \x04 \x02 \x82 q \x86 hh • \x0E\x1CG\x0E\x062\x99 \x06\x03 \x15\x15\x0F\x0E2\x98 2\x82 q • h\x03\x02\x1C\x0F\x032 \x97\x1A\x0F2\x06 \x0F2\x97 2hF\x85F\x84F • s \x83h 2\x99 \x06\x03 \x15\x15\x0F\x0E2\x98 2h\x05\x06 2p\x97\x99\x06 \x0324h4 • hF\x85F\x84F2E2h\x0F\x1C\x02\x99\x0F2\x85 \x0E\x0F\x032\x84\x0F \x06 hF\x85F\x84 \x01 s \x0E\x05\x99\x06 \x032g\x05\x03\x03\x0F \x06\n' + `s\x82pfG\x83G\x83vQVHT\x80\x98p 8 www.irf.com x\x02\x03\x04X2p\x02\b2\x03 \x042 \x02 \x032\x99 \b\b\x04\x0E\x032\x0F\b\x97\x11\x12\x0E\x132\x14\x15\x04\x97 \x042\b\x04\x16\x04\b2\x03\x022s\x822\x11\x04\x98 \x12\x03\x042\x97\x032 \x03\x03\x14XGG\x11\x11\x11F\x12\b\x16F\x99\x02 G\x14\x97\x99\x1C\x97\x13\x04G TO-220AB packages are not recommended for Surface Mount Application. \x84yEPPHef2\x80\x97\x99 \x97 \x0E2y\x0F\x10\x11\x12\x13\x0E2 2 @h\x04\x05\x06\x07\b\x04 \x07\b2\x97 \x062\b \x072\x04\x072\x05\x04\x0E\x0E\x04\x05\x06\x0F\x06 \b2@\x04\x07\x99 \x06\bAA \x84yEPPHef2\x80\x97\x14\x102w\x97\x14 \x12\x13 2s\x13\x17\x18\x14\x19\x97\x10\x12\x18\x13 (;$03/(\x1D ,1 7+( $66(0%/< /,1( \x1B&\x1B 7+,6 ,6 $1 ,5)\x14\x13\x14\x13 /27 &2'( \x14\x1A\x1B\x1C $66(0%/(' 21 :: \x14\x1C\x0F \x14\x1C\x1C\x1A 3$57 180%(5 $66(0%/< /27 &2'( '$7( &2'( <($5 \x1A \x14\x1C\x1C\x1A /,1( & :((. \x14\x1C /2*2 5(&7,),(5 ,17(51$7,21$/ Note: "P" in assembly line position indicates "Lead-Free"\n` + "s\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 9 h P \x80\x97 2@\x84yEPTQefA2\x80\x97\x14\x102w\x97\x14 \x12\x13 2s\x13\x17\x18\x14\x19\x97\x10\x12\x18\x13 h P \x80\x97 2@\x84yEPTQefA2\x80\x97\x99 \x97 \x0E2y\x0F\x10\x11\x12\x13\x0E h\x04\x05\x06\x07\b\x04 \x07\b2\x97 \x062\b \x072\x04\x072\x05\x04\x0E\x0E\x04\x05\x06\x0F\x06 \b2@\x04\x07\x99 \x06\bA '$7(\x04&2'( <($5\x04\x13\x04 \x04\x15\x13\x13\x13 :((.\x04\x13\x15 $\x04 \x04$66(0%/<\x046,7(\x04&2'( 5(&7,),(5 ,17(51$7,21$/ 3$57\x04180%(5 3\x04 \x04'(6,*1$7(6\x04/($'\x04\x10\x04)5(( 352'8&7\x04 237,21$/ )\x18\x16\x136 ,1\x047+(\x04$66(0%/<\x04/,1(\x04\x1E/\x1E $66(0%/('\x0421\x04::\x04\x13\x15\x0F\x04\x15\x13\x13\x13 7+,6\x04,6\x04$1\x04,5)\x18\x16\x136\x04:,7+ /27\x04&2'(\x04\x1B\x13\x15\x17 ,17(51$7,21$/ /2*2 5(&7,),(5 /27\x04&2'( $66(0%/< <($5\x04\x13\x04 \x04\x15\x13\x13\x13 3$57\x04180%(5 '$7(\x04&2'( /,1(\x04/ :((.\x04\x13\x15 PS )\x18\x16\x136 /2*2 $66(0%/< /27\x04&2'( x\x02\x03\x04X2p\x02\b2\x03 \x042 \x02 \x032\x99 \b\b\x04\x0E\x032\x0F\b\x97\x11\x12\x0E\x132\x14\x15\x04\x97 \x042\b\x04\x16\x04\b2\x03\x022s\x822\x11\x04\x98 \x12\x03\x042\x97\x032 \x03\x03\x14XGG\x11\x11\x11F\x12\b\x16F\x99\x02 G\x14\x97\x99\x1C\x97\x13\x04G\n" + "s\x82pfG\x83G\x83vQVHT\x80\x98p 10 www.irf.com TO-262 Part Marking Information TO-262 Package Outline Dimensions are shown in millimeters (inches) /2*2 5(&7,),(5 ,17(51$7,21$/ /27 &2'( $66(0%/< /2*2 5(&7,),(5 ,17(51$7,21$/ '$7( &2'( :((. \x14\x1C <($5 \x1A \x14\x1C\x1C\x1A 3$57 180%(5 $ $66(0%/< 6,7( &2'( PS 352'8&7 237,21$/ 3 '(6,*1$7(6 /($'\x10)5(( (;$03/(\x1D 7+,6 ,6 $1 ,5/\x16\x14\x13\x16/ /27 &2'( \x14\x1A\x1B\x1C $66(0%/< 3$57 180%(5 '$7( &2'( :((. \x14\x1C /,1( & /27 &2'( <($5 \x1A \x14\x1C\x1C\x1A $66(0%/(' 21 :: \x14\x1C\x0F \x14\x1C\x1C\x1A ,1 7+( $66(0%/< /,1( #&# x\x02\x03\x04X2p\x02\b2\x03 \x042 \x02 \x032\x99 \b\b\x04\x0E\x032\x0F\b\x97\x11\x12\x0E\x132\x14\x15\x04\x97 \x042\b\x04\x16\x04\b2\x03\x022s\x822\x11\x04\x98 \x12\x03\x042\x97\x032 \x03\x03\x14XGG\x11\x11\x11F\x12\b\x16F\x99\x02 G\x14\x97\x99\x1C\x97\x13\x04G\n" + 's\x82pfG\x83G\x83vQVHT\x80\x98p www.irf.com 11 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 02/08 h P \x80\x97 2@\x84yEPTQefA2\x84\x97\x1F\x0E282\x82\x0E\x0E\x112s\x13\x17\x18\x14\x19\x97\x10\x12\x18\x13 Dimensions are shown in millimeters (inches) 3 4 4 TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. x\x02\x03\x04X2p\x02\b2\x03 \x042 \x02 \x032\x99 \b\b\x04\x0E\x032\x0F\b\x97\x11\x12\x0E\x132\x14\x15\x04\x97 \x042\b\x04\x16\x04\b2\x03\x022s\x822\x11\x04\x98 \x12\x03\x042\x97\x032 \x03\x03\x14XGG\x11\x11\x11F\x12\b\x16F\x99\x02 G\x14\x97\x99\x1C\x97\x13\x04G\n' + '\n' + 'Quick test, what can you read from the provided document? Do you see images as well?' } ], prompt: undefined, model: 'deepseek/deepseek-v4-flash', temperature: 1, max_tokens: 128000, max_completion_tokens: undefined, stream: true, presence_penalty: 0, frequency_penalty: 0, top_p: 1, top_k: 500, stop: undefined, logit_bias: undefined, seed: undefined, n: undefined, transforms: [], plugins: [], reasoning: { exclude: false }, min_p: 0, top_a: 0, repetition_penalty: 1, provider: { allow_fallbacks: false, order: [ 'Alibaba', 'Baidu', 'DeepSeek', 'SiliconFlow', 'StreamLake' ] } } Streaming request in progress Streaming request finished ^C[SillyTavern-Office-Parser] Plugin exited ```

bsakaguchi referenced this issue

2026-10-15 18:07:21 +00:00

[GH-ISSUE #1] Error when loading docx, xlsx... #2

bsakaguchi closed this issue

2026-10-15 18:07:21 +00:00